Resistive Switching of the Tetraindolyl Derivative in Ultrathin Films: A Potential Candidate for Nonvolatile Memory Applications

Bipolar resistive switching using organic molecule is very promising for memory application owing to their advantages like simple device structure, low manufacturing cost, stability and flexibility etc. Herein we report Langmuir-Blodgett spin-coated film based bipolar devices material indole derivative. Pressure - area per isotherm, Brewster Angle Microscopy, Atomic Force Microscopy Scanning Electron were used have an idea about organization morphology of the onto thin film. Based on structure measurement protocol it observed that made up 1 shows non-volatile Resistive Random Access Memory behaviour with high window, data sustainability repeatability.Oxidation-reduction process as well electric field driven conduction are key behind such behaviour.Due good retention, repeatability, yield designed compound 1may be a potential candidate applications.